Toshiba TPH9R00CQH Silicon N-Channel MOSFET

Toshiba TPH9R00CQH Silicon N-Channel MOSFET offers high-speed switching with a small output and gate charge. The TPH9R00CQH is available in an SOP-8 package and operates up to 175°C. The device delivers a low drain-source on-resistance (7.3mΩ), low leakage current (10µA), and 3.3V to 4.3V enhancement mode. The Toshiba TPH9R00CQH Silicon N-Channel MOSFET is ideal for high-efficiency, DC-DC converter, switching voltage regulator, and motor driver applications.

FEATURES

  • High-speed switching
  • QSW = 11.7nC (typ.) Small gate charge
  • Qoss = 87nC (typ.) Small output charge
  • RDS(ON) = 7.3mΩ (typ.) (VGS = 10V) Low drain-source on-resistance
  • IDSS = 10µA (max) (VDS = 150V) Low leakage current
  • Vth = 3.3V to 4.3V (VDS = 10V, ID = 1.0mA) Enhancement mode

APPLICATIONS

  • High-efficiency
  • DC-DC Converters
  • Switching voltage regulators
  • Motor drivers

PACKAGING AND INTERNAL CIRCUITS

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