Toshiba TPH9R00CQH Silicon N-Channel MOSFET offers high-speed switching with a small output and gate charge. The TPH9R00CQH is available in an SOP-8 package and operates up to 175°C. The device delivers a low drain-source on-resistance (7.3mΩ), low leakage current (10µA), and 3.3V to 4.3V enhancement mode. The Toshiba TPH9R00CQH Silicon N-Channel MOSFET is ideal for high-efficiency, DC-DC converter, switching voltage regulator, and motor driver applications.
FEATURES
- High-speed switching
- QSW = 11.7nC (typ.) Small gate charge
- Qoss = 87nC (typ.) Small output charge
- RDS(ON) = 7.3mΩ (typ.) (VGS = 10V) Low drain-source on-resistance
- IDSS = 10µA (max) (VDS = 150V) Low leakage current
- Vth = 3.3V to 4.3V (VDS = 10V, ID = 1.0mA) Enhancement mode
APPLICATIONS
- High-efficiency
- DC-DC Converters
- Switching voltage regulators
- Motor drivers