
IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.
FEATURES
- Optimized for high-frequency, high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operations at all temperatures
- On-chip EEPROM
- Stores factory- and user-configured settings
- 78 bits of user EEPROM for additional storage
- On-chip charge pump for easy programming
- Flexible 12-bit ADC with 10-bit ENOB (Effective Number of Bits)
- 1% (typ) accurate factory-trimmed sensitivity options (±500G, ±1000G, and ±2000G full-scale input)
- Integrated temperature sensor
- Wide ambient temperature range of –40°C to 85°C
- 10-contact 3mm × 3mm × 0.8mm DFN package for implementation in low-profile, high-density PCB designs and space-constrained applications
APPLICATIONS
- High-frequency applications
- Solar inverters
- Switch-mode power supplies
- Uninterruptible power supplies (UPS)
- On-chip EEPROM
- Stores factory- and user-configured settings
- 78 bits of user EEPROM for additional storage
- On-chip charge pump for easy programming
- Flexible 12-bit ADC with 10-bit ENOB (Effective Number of Bits)
- 1% (typ) accurate factory-trimmed sensitivity options (±500G, ±1000G, and ±2000G full-scale input)
- Integrated temperature sensor
- Wide ambient temperature range of –40°C to 85°C
- 10-contact 3mm × 3mm × 0.8mm DFN package for implementation in low-profile, high-density PCB designs and space-constrained applications